Memory Module

DDR 400 MHZ 184-pin socket type dual in line memory module (DIMM)
2.6V power supply
Data rate: 400Mbps (max.)
2.5 V (SSTL_2 compatible) I/O
Double Data Rate architecture; two data transfers per clock cycle
Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
Data inputs and outputs are synchronized with DQS
DQS is edge aligned with data for READs; center aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data referenced to both edges of DQS
Auto precharge option for each burst access
Programmable burst length: 2, 4, 8
Programmable /CAS latency (CL): 3
Programmable output driver strength: normal/weak
Refresh cycles: (8192 refresh cycles /64ms) Hynix512MB 64*8/32*8/32*16 3years
Hynix1 GB 64*8/128*4 3years
Kingston512MB 64*8/32*8/32*16 3years
Kinces

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