Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceBlocking - Off StateDevice Type VRRM (1)VDRM (1)VRSM (1)R216CH05 500 500 600R216CH06 600 600 720R216CH08 800 800 960R216CH10 100010001150R216CH12 120012001300VRRM = Repetitive peak reverse voltageVDRM = Repetitive peak off state voltageVRSM = Non repetitive peak reverse voltage (2)Repetitive peak reverse leakage and off state leakageIRRM / IDRM = 20 mA - 40 mA (3)Critical rate of voltage rise (4)dV/dt = 400 V/sec
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